? 2010 ixys corporation, all rights reserved ds100247a(7/10) v dss = 500v i d25 = 120a r ds(on) 43 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 120 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c 120 a e as t c = 25 c4j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 1890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n/lb. weight 10 g IXFB120N50P2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 43 m features z high current handling capability z fast intrinsic diode z avalanche rated z low r ds(on) z low package inductance advantages z plus 264 tm package for clip or spring mounting z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls polarp2 tm hiperfet tm power mosfet g = gate d = drain s = source tab = drain plus264 tm tab s g d preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFB120N50P2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 65 105 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1860 pf c rss 40 pf r gi gate input resistance 0.83 t d(on) 43 ns t r 13 ns t d(off) 80 ns t f 12 ns q g(on) 300 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 96 nc q gd 94 nc r thjc 0.066 c /w r thcs 0.130 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 120 a i sm repetitive, pulse width limited by t jm 480 a v sd i f = 100a, v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.0 c i rm 16.4 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = 0.5 ? i d25 , v gs = 0v -di/dt = 100a/ s v r = 70v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) plus264 tm (ixfb) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved IXFB120N50P2 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ds - volts i d - amperes v gs = 10v 8v 6 v 5 v 7 v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 5 v 6 v 7 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 0123456789101112 v ds - volts i d - amperes 5v 6v 4v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 60a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 120a i d = 60a fig. 5. r ds(on) normalized to i d = 60a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 180 200 220 240 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFB120N50P2 fig. 7. input admittance 0 20 40 60 80 100 120 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 102030405060708090100110120 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 250v i d = 60a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2010 ixys corporation, all rights reserved IXFB120N50P2 ixys ref: f_120n50p2(9s)7-02-10-a fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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